MG1200FXF1US51 2002-02-14 1 toshiba gtr module silicon n-channel igbt MG1200FXF1US51 high power switching applications motor control applications high input impedance enhancement mode electrodes are isolated from case. equivalent circuit maximum ratings (ta 25c) characteristics symbol rating unit collector-emitter voltage v ces 3300 v gate-emitter voltage v ges 20 v rms i c 1200 (note 1) a collector current peak turn off current i cp 2400 (note 2) a peak 1 cycle surge current 10 ms (half sine) i fsm 10 ka collector power dissipation p c 4000 w operating junction temperature t j 40~125 c storage temperature range t stg 40~125 c isolation voltage v isol 6000 (ac 1 min) v terminal: m4/m8 2/7 screw torque mounting 4 nm caution: MG1200FXF1US51 has no short-circuit capability. note 1: 50 hz (half sine). t c 75c, switching loss is not contained. note 2: v cc 2200 v, v cp 2700 v, ls 160 nh, cge 0.1 f, rg 3.3 , vge 15v, tj 125c c g c c c e e e e
MG1200FXF1US51 2002-02-14 2 electrical characteristics (t vj 125c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge 20 v, v ce 0 v 50 na collector cut-off current i ces v ce 3300 v, v ge 0 v 75 100 ma gate-emitter cut-off voltage v ge (off) v ce 5 v, i c 1.2 a 4.4 v collector-emitter saturation voltage v ce (sat) i c 1200 a, v ge 15 v 4.6 5.3 v input capacitance c ies v ce 10 v, v ge 0 v, f 100 khz 230 nf rise time t r 0.3 s turn-on time t on 2.1 s fall time t f 1.8 s switching time turn-off time t off v cc 1800 v, i c 1200 a, v gg 15 v, c ge 0.1 f, rg (on)/(off) 3.9/3.3 (dic/dt (on) 4900 a/ s) (inductive load, l s 160 nh) 4.0 s forward voltage of diode v f i f 1200 a, v ge 0 v 3.5 4.0 v reverse recovery charge q rr 1000 c peak reverse recovery current i rr i f 1200 a, v gg 15 v, di f /dt 4900 a/ s, v cc 1800 v 1500 a turn-on loss e on 2.2 2.8 j turn-off loss e off v cc 1800 v, i c 1200 a, v gg 15 v, c ge 0.1 f, rg (on)/(off) 3.9/3.3 (dic/dt (on) 4900 a/ s) (inductive load, l s 160 nh) 2.0 3.0 j switching dissipation diode reverse recovery loss e dsw i f 1200 a, v gg 15 v, di f /dt 4900 a/ s, v cc 1800 v 1.0 1.5 j thermal resistance (t c 25c) characteristics symbol test condition min typ. max unit transistor (igbt) stage 8.0 r th (j-c) diode stage 16.0 thermal resistance r th (c-f) per module (note 3) 6.0 c/kw note 3: toshiba silicone?s yg6260 heat radiation grease is recommended for use with semiconductor devices. apply a thin, even (100-to-200- m) coating of grease.
MG1200FXF1US51 2002-02-14 3 reverse recovery energy e dsw (j) turn-off loss per a pulse e off (j) collector-emitter voltage v ce (v) i c ? v ce (typ.) collector current i c (a) forward voltage v f (v) i f ? v f (typ.) forward current i f (a) collector current i c (a) e on ? i c (typ.) turn-on loss per a pulse e on (j) collector current i c (a) e off ? i c (typ.) forward current i f (a) e dsw ? i f (typ.) time t (s) r th ? t (max) transient thermal resistance r th (j-c) ( c /w) v ge 15 v t vj 25c 125c 0 0 2 4 6 8 500 1000 1500 2000 2500 0 0 500 1000 1500 0.5 1.0 1.5 2.0 2.5 v cc 1800 v r g 3.3 c ge 0.1 f l s 160 nh v ge / 15 v t vj 125c 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 diode-stage igbt-stage 0.00003 t vj 25c 125c 0 0 2 4 6 500 1000 1500 2000 2500 0 0 500 1000 1500 0.4 0.6 0.8 1.0 1.2 v cc 1800 v di/dt 4900 a/ s l s 160 nh v ge 15 v t vj 125c 0.2 0.5 1.0 1.5 2.0 2.5 v cc 1800 v r g 3.9 c ge 0.1 f l s 160 nh v ge / 15 v t vj 125c 0 0 500 1000 1500
MG1200FXF1US51 2002-02-14 4 package dimensions: 2-193a1a unit: mm
MG1200FXF1US51 2002-02-14 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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